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EMF Study
(Database last updated on Mar 27, 2024)
ID Number |
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1084 |
Study Type |
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Engineering & Physics |
Model |
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900, 1800 MHz (CW, GSM) exposure and modeling of SAR distribution and surface heating using human FDTD models (ear and head) |
Details |
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Modeling was used to predict temperature rise in humans due to RF exposure from mobile phones. Using exposure at 900 MHz and a radiated power of 600 mW (50 min exposure, time constant of ~ 6 min), maximum SAR values (averaged over 1 g) were from 2.2 to 3.7 W/kg (depending on the phone model,) and maximum temperature increases in the ear from 0.22 C to 0.43 C, maximum temperature increases in the brain from 0.08 C to 0.19 C. Maximum temperature increase in the external part of the brain were from 0.10 C to 0.16 C for every 1 W/kg of SAR, averaged over 1 g of brain tissue. Although the maximum SAR (averaged over 1 g) in the brain is higher at 900 MHz than at 1800 MHz, the maximum temperature increase in the brain is higher at 1800 MHz. Taking into account that average power levels radiated for the two operating frequencies are different on the GSM network in Europe (250 mW at 900 MHz and 125 mW at 1800 MHz), higher temperature elevations are obtained at 900 MHz. When heating due to contact of the phone with the ear and cheek is taken into account, temperature increases in the ear as high as 1.5 C are predicted. In subsequent studies, numerical models of the human head predicted maximal temperature increases in the ear and brain assuming a cell phone (835 MHz) held to the ear and operating at full power (900 MHz, 250 mW average power). Calculations reported that the maximal temperature increase in the ear was 0.9 degrees C and the maximal temperature increase in the brain was 0.1 degrees C
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Findings |
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Effects |
Status |
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Completed With Publication |
Principal Investigator |
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La Sapienza, Rome Italy
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Funding Agency |
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Elettra 2000, Italy
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Country |
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ITALY |
References |
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Bernardi, P et al. IEEE TRANS. BIOMED. ENG., (2003) 50:295-304
Bernardi , P et al. IEEE Trans. Microwave Theory Tech., (2001) 49:2539-2546
Bernardi, P et al. IEEE Trans. Electromagn. Compat., (1999) 38:357-366
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